NUMERICAL STUDY OF FLOW PHENOMENA IN A PHOTO-ASSISTED MOCVD REACTOR FOR PREPARING YBCO THIN FILMS

Three-dimensional numerical study on flow phenomena in a photo-assisted MOCVD reactor for preparing YBCO thin films is conducted. By varying the angle between susceptor surface and inlet axis (Φ) and the top wall inclination angle (Ψ), velocity fields inside the reactor are calculated. It is found that the flow field is suitable for growing YBCO thin films when Φ=22.5° and Ψ=30° due to the uniform velocity and the depressed convection roll.